CMOS Image Sensor (CIS) devices play a key role in a wide range of products such as camcorders, digital cameras and mobile phones. CIS devices, which are now available in compact packages that operate on low power, convert real images into electric signals and then into digital signals. We provide various CIS products designed at 0.11um to 0.18um processing nodes. These include CIF, VGA and Megapixel options using N+/PW photo diode, color filters and microlens technologies.

0.18μm
- 3 Level Aluminum Process (up to M6)
- 0.18um Generic Process
- Own Library for 0.18um Process
- Dual Gate Oxide Process
- Pixel & I/O : 3.3V, Core : 1.8V
- Dark Current Reduction Process
- Thin BEOL Height- Stitching available

0.13μm
- 3 Level Aluminum Process
- Own Library for 0.13um Process
- Dual Gate Oxide Process
- Pixel & I/O : 3.3V, Core : 1.5V
- Dark Current Reduction Process
- Thin BEOL Height at Pixel area
- Minimized photo layers

0.11μm
- 3 Level Aluminum Process(up to M6)
- M0 local interconnection (only pixel area)
- Own Library for 0.11um Process
- Dual Gate Oxide Process
- Pixel & I/O : 2.8V/3.3V, Core : 1.5V
- Dark Current Reduction Process
- Thin BEOL Height
- Optimized Photo Layers
- Option process: 8fF MIM, Optimized Light guide process
- BSI available
- Stitching available
 
0.09μm
- 3 Level Aluminum Process(up to M6)
- M0 local interconnection (only pixel area)
- Own Library for 0.09um Process
- Dual Gate Oxide Process
- Pixel & I/O : 2.8V/3.3V, Core : 1.2V
- Dark Current Reduction Process
- Thin BEOL Height
- Optimized Photo Layers
- Option process: 8fF MIM, Optimized Light guide process
- BSI available

For more information, please contact sales1@dbhitek.com