DB하이텍은 세계적 수준의 아날로그 기술력을 바탕으로 TV, 모바일 등의 컨슈머 기기 뿐만 아니라 컴퓨터, 자동차, 의료기기 등 다양한 제품에 필요한 전력반도체를 생산하고 있습니다.

특히, 오랜 양산 경험을 바탕으로 0.35um~0.13um BCDMOS 공정을 통해 특화 분야의 Analog/Power 기술을 강화하고 있으며 저전력 및 전력 효율 특성을 증대하기 위해 노력을 기울이고 있습니다.

DB하이텍은 LED driver IC, Wireless charger, Motor driver IC, Class D amplifier, Power management IC 등 다양한 전력 반도체 양산을 통해 친환경 ‘Green IT’ 기술 실현에 한발짝 더 다가가고 있습니다.


0.13μm 40V BCDMOS
- 1.5V/5V CMOS with up to 8Metal available
- Industry-leading HS NLDMOS and PLDMOS up to 40V
- Implementation of fully Isolated devices are available
- Embedded NVM available
 
0.13μm 120V BCDMOS

- 1.5V/5V CMOS with up to 8Metal available
- Industry-leading HS NLDMOS and PLDMOS up to 120V
- Implementation of fully Isolated devices is available
- Embedded NVM available
 
0.18μm 35V BCDMOS(0.15um BEOL)
- 1.8V/5V CMOS with up to 6Metal available
- Industry-leading HS NLDMOS up to 35V, LS NLDMOS and PLDMOS up to 40V
- Implementation of fully Isolated devices is available
- Embedded NVM available
 
0.18μm 45V BCDMOS
- 5V and 6V CMOS available with up to 6Metal available
- 5V CMOS with gate OX TDDB to be guaranteed up to 6V
- Wide SOA and very low Rsp performance HS LDMOS and PLDMOS up to 45V
- Implementation of fully Isolated devices is available
 
0.18μm 60V BCDMOS
- 1.8V, 5V, and 6V CMOS with up to 6Metal available
- 5V CMOS with gate OX TDDB to be guaranteed up to 6V
- Industry-leading NLDMOS and PLDMOS up to 60V
- Implementation of fully Isolated devices is available
- Embedded NVM available
 
0.18μm 120V BCDMOS
- 1.8V, 5V, and 6V CMOS with up to 6Metal available
- 5V CMOS with gate OX TDDB to be guaranteed up to 6V
- Industry-leading HS NLDMOS and PLDMOS up to 120V
- Implementation of fully Isolated devices is available
- Embedded NVM available
 
0.35μm UHV 700V Non-epi process
- 7.5V CMOS with Isolation
- Up to 30V Asymmetric Drain-extended CMOS (DECMOS)
- Various LDMOS voltage rating (200V to 700V)
- Supports the JFET integrated LDMOS for highly optimized chip design
- Supports the UHV-resistor for BoM cost reduced design
- Supports the 1P1M design for cost-effective product design (11-mask layers)
 
0.35μm UHV 900V epi-process
- Supports applications with up to 900V breakdown voltage and especially suitable in the gate driver applications
- 5V/7V CMOS and up to 30V HV-CMOS
- 150V to 900V LDMOS
- Supports the built-in bootstrap diode for the high side gate driving

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