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BCDMOSBipolar CMOS-DMOS

아날로그/파워 IC의 핵심 BCDMOS

DB하이텍은 세계적 수준의 아날로그 기술력을 바탕으로 TV, 모바일 등의 컨슈머 제품뿐만 아니라 컴퓨터, 자동차, 의료기기 등 다양한 제품의 파워 IC를 생산하고 있습니다.

특히, 오랜 양산 경험을 바탕으로 0.35um~0.13um BCDMOS(Bipolar CMOS-DMOS) 공정을 통해 특화 분야의 A&P(Analog & Power) 기술을 강화하고 있으며 저전력 및 전력 효율 특성을 증대하기 위해 노력을 기울이고 있습니다.

DB하이텍은 40V~1200V까지 다양한 공정을 제공하여 Wireless Charger, Power Delivery, Motor Driver IC, Class D Amplifier, Power Management IC, Battery Management IC, Gate Driver 등 여러 응용 파워 제품을 양산하고 있습니다. 또한, User-friendly PDK와 다양한 EDA(Electronic Design Automation) 툴을 제공하여 고객이 보다 편리하게 설계할 수 있는 환경을 제공합니다.

프로세스

전력 효율을 극대화하는 0.35um~0.13um 공정 라인업

0.13μm 40V BCDMOS: 1.5V/5V CMOS with up to 8Metal available Industry-leading HS NLDMOS and PLDMOS up to 40V Implementation of fully Isolated devices are available Embedded NVM available

0.13μm 120V BCDMOS (DTI optional): 1.5V/5V CMOS with up to 8Metal available Industry-leading HS NLDMOS and PLDMOS up to 120V Implementation of fully Isolated devices is available Embedded NVM available

0.18μm 35V BCDMOS (0.15um BEOL): 1.8V/5V CMOS with up to 6Metal available Industry-leading HS NLDMOS up to 35V, LS NLDMOS and PLDMOS up to 40V Implementation of fully Isolated devices is available Embedded NVM available

0.18μm 45V BCDMOS: 5V and 6V CMOS available with up to 6Metal available 5V CMOS with gate OX TDDB to be guaranteed up to 6V Wide SOA and very low Rsp performance HS LDMOS and PLDMOS up to 45V Implementation of fully Isolated devices is available Embedded NVM available

0.18μm 80V BCDMOS: 1.8V, 5V, and 6V CMOS with up to 6Metal available 5V CMOS with gate OX TDDB to be guaranteed up to 6V Industry-leading NLDMOS and PLDMOS up to 80V Implementation of fully Isolated devices is available Embedded NVM available

0.18μm 120V BCDMOS: 1.8V, 5V, and 6V CMOS with up to 6Metal available 5V CMOS with gate OX TDDB to be guaranteed up to 6V Industry-leading HS NLDMOS and PLDMOS up to 120V Implementation of fully Isolated devices is available Embedded NVM available

0.35μm UHV 700V Non-epi process: 7.5V CMOS with Isolation Up to 30V Asymmetric Drain-extended CMOS (DECMOS) Various LDMOS voltage rating (200V to 700V) Supports the JFET integrated LDMOS for highly optimized chip design Supports the UHV-resistor for BoM cost reduced design Supports the 1P2M design for cost-effective product design (13-mask layers)

0.35μm UHV 900V epi-process: Supports applications with up to 900V breakdown voltage and especially suitable in the gate driver applications 5V/7V CMOS and up to 30V HV-CMOS 200V to 900V LDMOS Supports the built-in bootstrap diode for the high side gate driving

0.18μm 40V VDMOS: 5V/6V CMOS with up to 3Metal available Single Gate Trench VDMOS and Split Gate Trench VDMOS Up to 40V DE-CMOS and HV Depletion Std.cell, I/O, Embedded NVM available